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IBM0165805B - 8M x 8 12/11 EDO DRAM(8M x 8 动态RAM(超页面模式并带23条地址线,其中12条为行地址选通,11条为列地址选通))

IBM0165805B_2815831.PDF Datasheet


 Full text search : 8M x 8 12/11 EDO DRAM(8M x 8 动态RAM(超页面模式并带23条地址线,其中12条为行地址选通,11条为列地址选通))


 Related Part Number
PART Description Maker
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY 4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3164165BTL-60 HYB3164165BTL-50 HYB3164165BTL-40 4M x 16 Bit 4k EDO DRAM Low Power
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version)
Infineon
SIEMENS[Siemens Semiconductor Group]
IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
Integrated Silicon Solution, Inc.
Alliance Semiconductor
AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
Alliance Semiconductor
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS 5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
 
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